STP7N90K5

N沟道900 V、0.72 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-220封装; • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. \n\n

STP7N90K5

Marking：7N90K5；Package：TO-220；N-channel 900 V, 0.72 廓 typ., 7 A MDmesh??K5 Power MOSFET in a TO-220 package

STD7N90K5

Ultra-lowgatecharge

STF7N90K5

N-channel900V,0.72廓typ.,7AMDmesh??K5PowerMOSFETinaTO-220FPpackage

STW7N90K5

Zener-protected