N沟道900 V、0.72 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Zener-protected

文件：736.92 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Ultra-low gate charge

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STMICROELECTRONICS

意法半导体

N-channel 900 V, 0.72 廓 typ., 7 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：712.03 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) -RDS(on) = 0.81Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电