STP410N4F7AG

Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 180 A STripFET F7 in a TO-220 package; • Designed for automotive applications and AEC-Q101 qualified\n• Among the lowest RDS(on) on the market\n• Excellent FoM (figure of merit)• Low Crss/Ciss ratio for EMI immunity\n• High avalanche ruggedness;

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gatestructure that results in very low on-state resistance, while also reducing internalcapacitance and gate charge for faster and more efficient switching.\n \n

STP410N4F7AG

Automotive-grade N-channel 40 V, 1.5 m typ., 180 A STripFETTM F7 Power MOSFET in a TO-220 package

Features Designedforautomotiveapplicationsand AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Description ThisN-channelPowerMOSFETutilizes STripFET™F7technologyw

STP410N4F7AG

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CHANNEL 40V 180A TO220

STI410N4F7AG

AutomotiveN-channel40V,1.5mΩtyp.,180ASTripFET™F7PowerMOSFETinanI²PAKpackage

Features Designedforautomotiveapplications AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizes STripFE

STP43N60DM2

ST
TO220

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