N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 1050V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8Ω(Max)@VGS= 10V APPLICATIONS · Switching

文件：397.64 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：2N105K5；Package：TO-220；N-channel 1050 V, 6 廓 typ., 1.5 A MDmesh??K5 Power MOSFETs in DPAK, TO-220 and IPAK packages

文件：1.14192 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道1050 V、6 Ohm典型值、1.5 A MDmesh K5功率MOSFET，TO-220封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1050V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：375.6 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 1050 V, 6 廓 typ., 1.5 A MDmesh??K5 Power MOSFETs in DPAK, TO-220 and IPAK packages

文件：1.14192 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

1050V N-Channel MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

文件：2.9373 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子