丝印：160N4LF6；Package：TO-220；N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

Features • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive • High avalanche ruggedness • 100 avalanche tested Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STr

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STMICROELECTRONICS

意法半导体

N沟道40 V、0.0021 Ohm典型值、120 A STripFET F6功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. • RDS(on)* Qgindustry benchmark \n• Extremely low on-resistance RDS(on) \n• Logic level drive \n• High avalanche ruggedness \n• 100% avalanche tested;

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意法半导体

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TO-220AB

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SSOP24

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