isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.2mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Very low on-resistance

文件：393.83 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N沟道30 V、2.5 mOhm典型值、120 A STripFET H6功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体