STP150N10F7

N沟道100 V、0.0036 Ohm典型值、110 A STripFET F7功率MOSFET，TO-220封装; • 处于市面上最低的 RDS(on)行列 \n• 出色的品质因数（FoM） \n• 较低的Crss/Ciss 比值使得其具有更强的抗EMI能力 \n• 坚固的抗雪崩能力;

该N-沟道功率MOSFETs利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。\n\n

STP150N10F7

isc N-Channel MOSFET Transistor

STP150N10F7

High avalanche ruggedness

STP150N10F7

N-Channel MOSFET uses advanced SGT technology

STP150N10F7AG

N-channel 100 V STripFET F7 Power MOSFET in TO-220 package for Automotive Applications; • Designed for automotive application \n• Standard level VGS(TH) \n• 175°C junction temperature \n• 100% avalanche rated;

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.\n\n

STP150N10F7AG

Automotive N-channel 100 V, 4.2 m廓 typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package