N-CHANNEL 500V - 0.48ohm - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Feature

文件：585.7 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max)@VGS= 10V APPLICATION ·Switching applications

文件：295.82 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 500V - 0.48ohm - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Feature

文件：585.7 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.48ohm - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Feature

文件：585.7 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.48 廓 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

文件：415.53 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.48 廓 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

文件：415.53 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N沟道500 V、0.48 Ohm典型值、10 A SuperMESH功率MOSFET，TO-220封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very low intrinsic capacitances;

ST

意法半导体

N沟道500 V、0.48 Ohm典型值、10 A SuperMESH功率MOSFET，TO-220FP封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very low intrinsic capacitances;

ST

意法半导体