STN3N45K3

N沟道450 V、3.2 Ohm、1.8 A SuperMESH3(TM) 功率MOSFET，SOT-223封装; • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.\n\n

STN3N45K3

N-channel 450 V, 3.2 廓, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3??Power MOSFET

STQ3N45K3-AP

aPhase-Dimmable,Primary-SideRegulatedLEDDriver

STQ3N45K3-AP

Verylowintrinsiccapacitance

STU3N45K3

N-channel450V-3.3廓typ.,1.8AZener-protectedSuperMESH3??PowerMOSFETinaIPAKpackage