N沟道450 V、3.2 Ohm、1.8 A SuperMESH3(TM) 功率MOSFET，SOT-223封装

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体

N-channel 450 V, 3.2 廓, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3??Power MOSFET

文件：487.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

a Phase-Dimmable, Primary-Side Regulated LED Driver

文件：1.245 Mbytes 页数：26 Pages

TI

德州仪器

Very low intrinsic capacitance

文件：877.3 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 450 V - 3.3 廓 typ., 1.8 A Zener-protected SuperMESH3??Power MOSFET in a IPAK package

文件：838.56 Kbytes 页数：14 Pages

STATEK