Automotive-grade N-channel 80 V STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness \n• Wettable flank package;

ST

意法半导体

POWERFLAT5X6

ST/意法

上传：深圳庞田科技有限公司

QFN

ST

上传：深圳市向鸿伟业电子有限公司

DFN5X6

STM

信盛精工

上传：深圳市金芯世纪电子有限公司

DFN5X6

ST

上传：深圳诚思涵科技有限公司