8-bit micro controller

• 80C51 Central Processing Unit (CPU). \r\n• Program Memory : 64 kbytes on-chip flash memory. \r\n• Main Data RAM: 256 bytes (upper 128 + lower 128 bytes) of on-chip SRAM.\r\n• Stretch memory cycle for the MOVX instruction.\r\n• Timers: Timer 0, Timer 1, and Timer 2.\r\n• Full-duplex UART\r\n• On-ch;

Syntek

太欣半导体

Electronic power general current transformer

文件：1.46917 Mbytes 页数：1 Pages

YHDC

德昌电气设备

1.5-MHz, 100-μA, RRIO, Operational Amplifiers

Features • Supply Voltage: 2.5 V to 5.5 V • Low Supply Current: 100 μA per Channel • Excellent Capacitive Load Drive Capability • Offset Voltage: 3.5 mV • Offset Voltage Temperature Drift: 1μV/°C • Rail-to-Rail Input and Output • Bandwidth: 1.5 MHz • Slew Rate: 0.7 V/μs • Excellent EMI Su

文件：2.12436 Mbytes 页数：22 Pages

3PEAK

思瑞浦

GENERAL PURPOSE MIDGET CLASS MCL

文件：620.75 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES • 30V, 60A, RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. • Super high dense cell design for extremely low RDS(ON). • High power and curent handing capability. • TO-220 & TO-263 package.

文件：513.64 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES • 30V, 60A, RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. • Super high dense cell design for extremely low RDS(ON). • High power and curent handing capability. • TO-220 & TO-263 package.

文件：513.64 Kbytes 页数：5 Pages

CET

华瑞