N-channel 950 V, 1 Ohm typ., 9 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technologybased on an innovative proprietary vertical structure. The result is a dramaticreduction in on-resistance and ultra-low gate charge for applications requiring superiorpower density and high efficiency. \n • Industry’s lowest RDS(on) x area\n• Industry’s best FoM (figure of merit)\n• Ultra-low gate charge• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：NCHANNEL 950V ZENER POWER MOSFET

STMICROELECTRONICS

意法半导体

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

文件：1.22735 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.87 Kbytes 页数：2 Pages

ISC

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N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

文件：1.22735 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体