丝印：400N4F6；Package：H2PAK-2；Automotive-grade N-channel 40 V, 0.85 m??typ.,180 A STripFET??VI DeepGATE??Power MOSFETs

文件：794.59 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：400N4F6；Package：H2PAK-6；Automotive-grade N-channel 40 V, 0.85 m??typ.,180 A STripFET??VI DeepGATE??Power MOSFETs

文件：794.59 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 40 V, 0.85 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package

These devices are N-channel Power MOSFETs developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages. Designed for automotive applications and AEC-Q101 qualified\nLow gate charge\nVery low on-resistance\nHigh avalanche ruggedness;

ST

意法半导体

N-channel 40 V, 120 A STripFET??VI DeepGATE?? Power MOSFET in I짼PAK and TO-220 packages

文件：181.54 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) -RDS(on) = 1.7mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.39 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.12 Kbytes 页数：2 Pages

ISC

无锡固电