Automotive-grade N-channel 40 V, 0.85 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package

These devices are N-channel Power MOSFETs developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages. Designed for automotive applications and AEC-Q101 qualified\nLow gate charge\nVery low on-resistance\nHigh avalanche ruggedness;

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丝印：400N4F6；Package：H2PAK-2；Automotive-grade N-channel 40 V, 0.85 m??typ.,180 A STripFET??VI DeepGATE??Power MOSFETs

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STMICROELECTRONICS

意法半导体

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BGA

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ST/意法
BGA

ST/意法

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SUNTO

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