STGB7NC60HD_V01中文资料意法半导体数据手册PDF规格书

描述 Description

These devices are very fast IGBT developed

using advanced PowerMESH™ technology. This

process guarantees an excellent trade-off

between switching performance and low on-state

behavior. These devices are well-suited for

resonant or soft-switching applications.

特性 Features

■ Low on-voltage drop (VCE(sat))

■ Off losses include tail current

■ Losses include diode recovery energy

■ High frequency operation up to 70 kHz

■ Very soft ultra fast recovery anti parallel diode

Applications

■ High frequency inverters

■ SMPS and PFC in both hard switch and

resonant topologies

■ Motor drivers