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STG200M65F2D8AG中文资料汽车级650 V、200 A沟槽栅场截止M系列IGBT晶片，D8封装数据手册ST规格书
STG200M65F2D8AG规格书详情
描述 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
特性 Features
• AEC-Q101 qualified
• Low-loss series IGBT
• Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Maximum junction temperature: TJ = 175 °C
• 6 µs minimum short-circuit withstanding time at TJ = 150 °C
技术参数
- 制造商编号
：STG200M65F2D8AG
- 生产厂家
：ST
- Grade
：Automotive
- VCES_max(V)
：650
- IC_max(@ Tc=100°C)(A)
：200
- VCE(sat)_typ(V)
：1.55
- Qg_typ(nC)
：650
- Eoff_typ(mJ)
：5.5
- Die size(mm2)
：99.54
- tSC
：Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC |
24+ |
NA/ |
57 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SGS-THOMSON |
23+ |
BGA |
19726 |
询价 | |||
ST |
25+ |
PLCC-84 |
18000 |
原厂直接发货进口原装 |
询价 | ||
SAMSUNG/三星 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
SGS-THOMSON |
1999 |
BGA |
40 |
原装现货海量库存欢迎咨询 |
询价 | ||
ST |
23+ |
BGA |
16900 |
正规渠道,只有原装! |
询价 | ||
VBsemi |
24+ |
TSSOP8 |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
VBsemi |
24+ |
TSSOP8 |
25836 |
新到现货，只做全新原装正品 |
询价 | ||
VBsemi |
24+ |
TSSOP8 |
5000 |
全新原装正品,现货销售 |
询价 | ||
24+ |
PLCC84 |
10000 |
自己现货 |
询价 |
