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STG200M65F2D8AG数据手册ST中文资料规格书
STG200M65F2D8AG规格书详情
描述 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
特性 Features
• AEC-Q101 qualified
• Low-loss series IGBT
• Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Maximum junction temperature: TJ = 175 °C
• 6 µs minimum short-circuit withstanding time at TJ = 150 °C
技术参数
- 制造商编号
：STG200M65F2D8AG
- 生产厂家
：ST
- Grade
：Automotive
- VCES_max(V)
：650
- IC_max(@ Tc=100°C)(A)
：200
- VCE(sat)_typ(V)
：1.55
- Qg_typ(nC)
：650
- Eoff_typ(mJ)
：5.5
- Die size(mm2)
：99.54
- tSC
：Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC |
24+ |
NA/ |
57 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VBsemi |
24+ |
TSSOP8 |
12000 |
原装正品 假一罚十 可拆样 |
询价 | ||
ST |
24+ |
BGA |
2140 |
全新原装!现货特价供应 |
询价 | ||
Sage Millmeter |
24+ |
模块 |
400 |
询价 | |||
SAMHOP |
23+ |
TSSOP-8 |
33435 |
原装正品现货 |
询价 | ||
SAMHOP |
2024+ |
TSSOP8 |
50000 |
原装现货 |
询价 | ||
SEMTECH |
24+ |
SC70-6L |
37500 |
原装正品现货,价格有优势! |
询价 | ||
SAMSUNG/三星 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
SAMHOP/三合微科 |
23+ |
TSSOP8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
SGS-THOMSON |
23+ |
BGA |
19726 |
询价 |
