STG200M65F2D11AG中文资料Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D11 packing数据手册ST规格书

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

特性 Features

• AEC-Q101 qualified
• Low-loss series IGBT
• Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distribution
• Maximum junction temperature: TJ = 175 °C
• 6 µs minimum short-circuit withstanding time at TJ = 150 °C