首页>STFH18N60M2>规格书详情
STFH18N60M2中文资料N沟道600 V、0.255 Ohm典型值、13 A MDmesh M2功率MOSFET，TO-220FP宽沿面封装数据手册ST规格书
STFH18N60M2规格书详情
描述 Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
特性 Features
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
• Wide distance of 4.25 mm between the pins
技术参数
- 制造商编号
：STFH18N60M2
- 生产厂家
：ST
- Package
：TO-220FP wide creepage
- Grade
：Industrial
- VDSS(V)
：600
- RDS(on)_max(@ VGS=10V)(Ω)
：0.28
- Drain Current (Dc)_max(A)
：13
- PTOT_max(W)
：25
- Qg_typ(nC)
：21.5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-220FP-3 |
8860 |
原装现货,实单价优 |
询价 | ||
STM |
23+ |
TO-220FP-3 Wide Creepage |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220FP-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220FP-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST(意法半导体) |
24+ |
TO-220F |
7825 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220FP-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
23+ |
TO-220FP-3 |
16900 |
公司只做原装，可来电咨询 |
询价 | ||
STM |
23+ |
TO-220FP-3 Wide Creepage |
5520 |
原装现货支持送检 |
询价 | ||
ST/意法半导体 |
25+ |
TO-220FP-3 |
10000 |
原装公司现货 |
询价 |
