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STFH10N60M6中文资料N-channel 600 V, 520 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide crepage package数据手册ST规格书
STFH10N60M6规格书详情
描述 Description
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
特性 Features
• Reduced switching losses
• Lower RDS(on) per area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
技术参数
- 制造商编号
：STFH10N60M6
- 生产厂家
：ST
- Package
：TO-220FP wide creepage
- Grade
：Industrial
- VDSS(V)
：600
- RDS(on)_max(@ VGS=10V)(Ω)
：0.6
- Drain Current (Dc)_max(A)
：6.4
- PTOT_max(W)
：20
- Qg_typ(nC)
：8.8
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO220F |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法 |
24+ |
NA/ |
6512 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
16+ |
TO-220F |
6512 |
询价 | |||
ST/意法半导体 |
21+ |
TO-220FP-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220FP-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220FP-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220FP-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST(意法半导体) |
24+ |
N/A |
8000 |
只做原装,正品 |
询价 |
