N-channel 600 V, 520 m typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide creepage package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：552 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 520 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide crepage package

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses\n• Lower RDS(on) per area vs previous generation\n• Low gate input resistance• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

N-channel 600 V, 550 m typ., 5.5 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：793.18 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

TO-3PF

ST

上传：深圳市联世界科技有限公司

TO-247F

ST

上传：深圳德田科技有限公司