丝印：26NM60N；Package：TO-220FP；N-channel 600 V, 0.135 ?? 20 A MDmesh??II Power MOSFET in TO-220FP

Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding h

文件：707.63 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.135, 20 A MDmesh II Power MOSFET in PAKFP package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

文件：679.01 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

文件：1.14259 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：358.69 Kbytes 页数：2 Pages

ISC

无锡固电