isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh?줡ower MOSFET

DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s propr

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STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.2 廓, 16 A MDmesh??II Power MOSFET

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：994.47 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

丝印：22NM60ND；Package：TO-220FP；Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package

Description This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converter

文件：790.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15843 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

Isc N-Channel MOSFET Transistor

文件：290.86 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道600 V、0.2 Ohm、16 A MDmesh(TM) II功率MOSFET，TO-220FP封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

Automotive-grade N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh II Power MOSFET in a TO-220FP package

This FDmesh™ II Power MOSFET with fast-recovery body diode is produced using MDmesh™ II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.\n Designed for automotive applications and AEC-Q101 qualified\nFast-recovery body diode\nLow gate charge and input capacitance\nLow on-resistance\n100% avalanche tested\nHigh dv/dt ruggedness\n;

ST

意法半导体