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STF12NM50ND中文资料N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package数据手册ST规格书
STF12NM50ND规格书详情
描述 Description
The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
特性 Features
The worldwide best R
DS(on)* area amongst the fast recovery diode devices
Low input capacitance and gate charge
100% avalanche tested
Extremely high dv/dt and avalanche capabilities
Low gate input resistance
技术参数
- 型号：
STF12NM50ND
- 功能描述：
MOSFET N-channel 500 V 11 A Fdmesh
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
25+ |
TO22F |
32360 |
ST/意法全新特价STF12NM50ND即刻询购立享优惠#长期有货 |
询价 | ||
ST |
1932+ |
TO-220F |
362 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
23+ |
TO-220F |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
2517+ |
TO22F |
8850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST/意法 |
23+ |
TO220FP |
25000 |
代理原装现货,假一赔十 |
询价 | ||
STMicroelectronics |
23+ |
TO22F |
50000 |
只做原装正品 |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST/意法 |
23+ |
DIP |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
24+ |
TO-220F |
1250 |
原装现货热卖 |
询价 |
