汽车级P沟道-30 V、5 mOhm典型值、-80 A STripFET H6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Designed for automotive applications and AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss \n• Logic level;

ST

意法半导体

丝印：95P3LLH6；Package：DPAK；Automotive-grade P-channel -30 V, 5 mΩ typ., -80 A STripFET™ H6 Power MOSFET in a DPAK package

Features  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Logic level Applications  Switching applications Description This device is a P-channel Power MOSFET d

文件：731.16 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 30V 80A DPAK

STMICROELECTRONICS

意法半导体

ST
TO-252

ST

上传：深圳市轩嘉盛电子有限公司

NDK

NDK

金属工业

上传：天津市博通航睿技术有限公司