Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

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STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

文件：2.091489 Mbytes 页数：7 Pages

DOINGTER

杜因特

Compact 27W USB Type-C??Power Delivery 3.0 with PPS adapter reference design

文件：201.28 Kbytes 页数：4 Pages

STMICROELECTRONICS

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N沟道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high effici • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 650 V, 0.91 Ohm typ., 5 A MDmesh M6 Power MOSFET in a DPAK package

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses\n• Lower RDS(on) per area vs previous generation\n• Low gate input resistance• 100% avalanche tested\n• Zener-protected;

ST

意法半导体