STD7N60M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD7N60M6

Marking：7N60M6；Package：DPAK；N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters •BoostPFCconverters Description ThenewMDmeshM6technologyincorporate

STD7N60M2

Extremely low gate charge

SVF7N60T

N-Channel600V(D-S)PowerMOSFET

SW7N60

N-ChannelMOSFET

[SAMWIN] GeneralDescription ThispowerMOSFETisproducedinCHMCwithadvancedVDMOSprocess,planarstripe.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacterist

SW7N60

N-channelMosfet

SW7N60A

N-channelMOSFET

GeneralDescription ThispowerMOSFETisproducedwithadvancedVDMOStechnologyofSAMWIN.ThistechnologyenablepowerMOSFETtohavebettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandespeciallyexcellentavalanchecharacteristics.ThispowerMOSFETi

SW7N60D

N-channelTO-220FMOSFET

SW7N60H

N-channelTO-220FMOSFET

SW7N60K

N-channelTO-220F/I-PAKMOSFET