N沟道60 V、0.014 Ohm典型值、60 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体

N沟道55 V、0.012 Ohm、60 A DPAK STripFET(TM) II功率MOSFET

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing r • Low threshold drive;

ST

意法半导体

N-channel 30V - 0.0075Ω - 60A - DPAK STripFET™ II Power MOSFET

TI

德州仪器