STD60NF06

N-CHANNEL 60V - 0.014ohm - 60A DPAK STripFET??II POWER MOSFET

Description ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecomandComputera

STD60NF06

N-channel 60V - 0.014ohm - 60A - DPAK

Description ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecomandComputera

STD60NF06T4

N-channel 60V - 0.014ohm - 60A - DPAK

Description ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecomandComputera

STD60NF06T4

N沟道60 V、0.014 Ohm典型值、60 A STripFET II功率MOSFET，DPAK封装; • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.\n\n

STD60NF3LL

N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET??II POWER MOSFET

Description ThisapplicationspecificPowerMOSFETisthethirdgenarationofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsthebesttrade-offbetweenon-resistanceanggatecharge.Whenusedashighandlowsideinbuckregulators,itgives

STD60NF55L

N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET??II POWER MOSFET

Description ThisMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkable

STD60NF55L

N沟道55 V、0.012 Ohm、60 A DPAK STripFET(TM) II功率MOSFET; • Low threshold drive;

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.\n\n

STD60NF55LA

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemark

STD60NF55LAT4

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemark

STD60NF06

N-Channel MOSFET uses advanced trench technology