N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：618.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：447.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

文件：1.32896 Mbytes 页数：5 Pages

DOINGTER

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丝印：D5NK50Z；Package：TO-251；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：618.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：D5NK50Z；Package：TO-251；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：447.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：D5NK50Z；Package：DPAK；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelect

文件：674.1 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

丝印：D5NK50Z；Package：TO-251；N-CHANNEL 500V - 1.22廓 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?줞OSFET

文件：452.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：D5NK50Z；Package：TO-252；N-CHANNEL 500V - 1.22廓 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?줞OSFET

文件：452.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 1.22 Ohm typ., 4.4 A Zener-protected SuperMESH Power MOSFET in DPAK package

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements VERY GOOD MANUFACTURING REPEATIBILITY\nVERY LOW INTRINSIC CAPACITANCES\nTYPICAL R\nDS(on) = 1.22 \nIMPROVED ESD CAPABILITY\nEXTREMELY HIGH dv/dt CAPABILITY\nGATE CHARGE MINIMIZED\n100% AVALANCHE RATED;

ST

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N沟道500 V、1.22 Ohm典型值、4.4 A SuperMESH功率MOSFET，DPAK封装

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

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