High avalanche ruggedness

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STMICROELECTRONICS

意法半导体

丝印：45P4LLF6；Package：DPAK；Automotive-grade P-channel -40 V, 12 m廓 typ., -50 A STripFET??F6 Power MOSFET in a DPAK package

文件：603.58 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

汽车级P沟道-40 V、12 mOhm典型值、-50 A STripFET F6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Designed for automotive applications and AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

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意法半导体

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TO-252

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上传：深圳市华康联电子科技有限公司

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TO-252-3

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上传：天津市博通航睿技术有限公司