首页 >STD40NF10MOS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-CHANNEL100V-0.024ohm-50ATO-220/D2PAK/I2PAKLOWGATECHARGESTripFET??IIPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniquesinglefeaturesizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsallowingremarkab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel100V-0.025廓-50ATO-220/DPAKLowgatechargeSTripFET??IIPowerMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniquesinglefeaturesizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsallowingremarkab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel100V-0.025??-50ATO-220LowgatechargeSTripFET??IIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=33mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNEL100V-0.028ohm-40ATO-220LOWGATECHARGESTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecifical lybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimary switchinadvancedhigh-efficiencyisolatedDC-DCconvertersforTelecomandComputer | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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