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STD3NM60T4

N-channel600V,1.3??3ATO-220,DPAK,IPAKZener-protectedMDmesh??PowerMOSFET

DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics. ■TYPICAL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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