N-channel 800 V, 3.8 廓, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET

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STMICROELECTRONICS

意法半导体

N沟道800 V、3.8 Ohm典型值、2.5 A SuperMESH功率MOSFET，IPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体

N沟道800 V、3.8 Ohm典型值、2.5 A SuperMESH功率MOSFET，DPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体