Gate charge minimized

文件：990.86 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

文件：1.07824 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel 400 V, 2.7 Ohm typ., 2 A SuperMESH K3 Power MOSFET in a DPAK package

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable fo • 100% avalanche tested\n• Extremely high dv/dt capability\n• Gate charge minimized• Very low intrinsic capacitance\n• Improved diode reverse recovery characteristics\n• Zener-protected;

ST

意法半导体

Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 2.6Ω (Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters motor drivers and relay drivers

文件：67.41 Kbytes 页数：2 Pages

ISC

无锡固电

3A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

文件：198.32 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件：211.42 Kbytes 页数：6 Pages

UTC

友顺