丝印：35PLLF6；Package：TO-252；-60V P-Channel MOSFET

Order code VDSS RDS(on) max. STD35P6LLF6 60 V 0.028 Ω 35 Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Features VDS (V) = -60V RDS(ON)

文件：934.02 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：STD35PLLF6；Package：TO-252；-60V P-Channel MOSFET

Features Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss VDS (V) = -60V RDS(ON)

文件：579.87 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：35P6LLF6；Package：DPAK；P-channel 60 V, 0.025 廓 typ., 35 A STripFET??F6 Power MOSFET in a DPAK package

文件：754.12 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

P-Channel 60 V (D-S) MOSFET

文件：971.91 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P沟道60 V、0.025 Ohm典型值、35 A STripFET F6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体