丝印：D35NF06L；Package：DPAK；N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

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STMICROELECTRONICS

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N-channel 60V - 0.018廓 - 35A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：319.96 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-Channel 60 V (D-S) MOSFET

文件：989.71 Kbytes 页数：7 Pages

VBSEMI

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N-Channel 6 0-V (D-S) MOSFET

文件：897.22 Kbytes 页数：6 Pages

VBSEMI

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N沟道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • Low threshold drive \n• Gate charge minimized;

ST

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