STD170N4F7AG中文资料意法半导体数据手册PDF规格书

特性 Features

 AEC-Q101 qualified

 Among the lowest RDS(on) on the market

 Excellent FoM (figure of merit)

 Low Crss/Ciss ratio for EMI immunity

 High avalanche ruggedness

描述 Description

This N-channel Power MOSFET utilizes

STripFETTM F7 technology with an enhanced

trench gate structure that results in very low onstate

resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Applications

 Switching applications