N沟道500 V、0.299 Ohm典型值、11 A MDmesh DM2功率MOSFET，DPAK封装

This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

Fast-recovery body diode

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STMICROELECTRONICS

意法半导体

Fast-recovery body diode

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STMICROELECTRONICS

意法半导体

TO-252

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TO-252-3

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