NPN Silicon Transistor

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCEO = 100V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • “Green” device and RoHS compliant device • Available in full lead (Pb)-free device

文件：404.33 Kbytes 页数：6 Pages

KODENSHI

可天士

Power Transistors

Kodenshi-AUK

Triple half-bridge high-voltage gate driver

Features • High voltage rail up to 600 V • Driver current capability: – 200 mA source current @ 25 °C – 350 mA sink current @ 25 °C • dV/dt transient immunity ±50 V/ns • Gate driving voltage range from 9 V to 20 V • Overall input-output propagation delay: 85 ns • Matched propagation delay

文件：406.8 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

Triple half-bridge high-voltage gate driver

Features • High voltage rail up to 600 V • Driver current capability: – 200 mA source current @ 25 °C – 350 mA sink current @ 25 °C • dV/dt transient immunity ±50 V/ns • Gate driving voltage range from 9 V to 20 V • Overall input-output propagation delay: 85 ns • Matched propagation delay

文件：406.8 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：103.56 Kbytes 页数：7 Pages

SAMHOP

三合微科