NPN Silicon Transistor

Features • High collector breakdown voltage : VCEO = 50V • Low collector saturation voltage : VCE(sat)= 0.35V(Max.) • “Green” device and RoHS compliant device • Available in full lead (Pb)-free device Applications • Power amplifier application • High current switching application

文件：324.88 Kbytes 页数：6 Pages

KODENSHI

可天士

Power Transistors

Kodenshi-AUK

Audioprocessor

文件：1.25922 Mbytes 页数：32 Pages

SIEMENS

西门子

300um Discrete pHEMT

Key Features and Performance • 0.25um pHEMT Technology • DC 22 GHz Frequency Range • 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation • Floating Source Configuration • Chip Dimensions 0.620 mm x 0.514 mm Primary Applications • Low Noise amplifiers

文件：554.12 Kbytes 页数：5 Pages

TRIQUINT

300um Discrete pHEMT

Key Features and Performance • 0.25um pHEMT Technology • DC 22 GHz Frequency Range • 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation • Floating Source Configuration • Chip Dimensions 0.620 mm x 0.514 mm Primary Applications • Low Noise amplifiers

文件：554.12 Kbytes 页数：5 Pages

TRIQUINT