Emitter switched bipolar transistor ESBT짰 1700V - 4A - 0.17 W

Description The STC04IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current cascode configuration ■ Low eq

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Hybrid emitter switched bipolar transistor ESBT짰 1200V - 5A - 0.18 ohm

Description The STC05DE120HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC05DE120HV is designed for use in aux flyback smps for any three phase application. Genera

文件：229.11 Kbytes 页数：9 Pages

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HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 5 A - 0.10 ohm

DESCRIPTION The STC05DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC05DE150 is designed for use in aux flyback smps for any three phase application. General Fe

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Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12OHM

Description The STC05IE150HP is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Features ■ High voltage / high current Cascode configuration ■ Low equivalent on

文件：145.31 Kbytes 页数：7 Pages

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丝印：C05IE150HV；Package：TO247-4LHV；Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm

Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Features ■ High voltage / high current Cascode configuration ■ Low equi

文件：118.97 Kbytes 页数：7 Pages

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Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?

Description The STC06IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies. Features ■ High voltage / high current cascode configuration ■ Low equivalent

文件：144.65 Kbytes 页数：8 Pages

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HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM

DESCRIPTION The STC08DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150 is designed for use in aux flyback smps for any three phase application. General Fe

文件：264.36 Kbytes 页数：9 Pages

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丝印：C08DE150HP；Package：TO247-4L；Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm

Description The STC08DE150HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150HP is designed for use in aux flyback smps for any three phase application. Gener

文件：297.88 Kbytes 页数：11 Pages

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Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm

Description The STC08DE150HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150HV is designed for use in aux flyback smps for any three phase application. Gener

文件：270.72 Kbytes 页数：11 Pages

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Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm

Description The STC08IE120HP is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equi

文件：295.51 Kbytes 页数：11 Pages

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