Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar

文件：363.54 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：STC；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 1120~1600 Watts Peak Pulse Power per Line (tp=8/20μs) Protects One Unidirectional I/O Line Low clamping voltage Working voltages: 3.0V,15V, 36V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 80A,40A,16A (

文件：4.09787 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：STC；Package：SMA；TVS Diodes Surface Mount > 400W > SZ1SMA Series

文件：794.06 Kbytes 页数：7 Pages

LITTELFUSE

力特

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 ohm

DESCRIPTION The STC03DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE150 is designed for use in aux flyback smps for any three phase application. General Fe

文件：327.41 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 Ohm

DESCRIPTION The STC03DE170 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170 is designed for use in aux flyback smps for any three phase application. General Fe

文件：329.01 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM

Description The STC03DE170HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170HP is designed for use in aux flyback smps for any three phase application.

文件：313.51 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 OHM

Description The STC03DE170HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170HV is designed for use in aux flyback smps for any three phase application. Featur

文件：288.04 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 ?

Description The STC03DE220HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE220HP is designed for use in aux flyback SMPS for any three phase application. Featur

文件：128.25 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33OHM

Description The STC03DE220HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE220HV is designed for use in aux flyback smps for any three phase application.

文件：143.2 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17OHM

Description The STC04IE170HP is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current cascode configuration

文件：282.73 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体