Automotive-grade N-channel 55 V, 6.5 m typ.,80 A STripFETTM Power MOSFETs in D²PAK and TO-220 packages

Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically

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STMICROELECTRONICS

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汽车级N沟道55 V、6.5 mOhm典型值、80 A STripFET功率MOSFET，D2PAK封装

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c • Designed for automotive applications and AEC-Q101 qualified \n• 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

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N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

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STMICROELECTRONICS

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N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET

文件：358.21 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

文件：368.17 Kbytes 页数：15 Pages

STMICROELECTRONICS

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