isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

文件：353.3 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

文件：368.17 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET

文件：358.21 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：998.2 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N沟道55V - 0.0065Ohm - 80A - TO-220 StripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique \\\"single feature size\\\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manuf • Standard threshold drive;

ST

意法半导体

Automotive-grade N-channel 55 V, 6.5 m typ.,80 A STripFETTM Power MOSFETs in D²PAK and TO-220 packages

Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically

文件：1.00835 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 55 V, 6.5 mOhm typ., 80 A STripFET Power MOSFET in a TO-220 package

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process,which is specifically designed to minimize input capacitance and gate charge. This renders thedevices suitable for use as primary switch in advanced high-efficiency isolated DC-DCconverters for telecom and comp • Designed for automotive applications and AEC-Q101 qualified\n• 100% avalanche tested• Low input capacitance and gate charge\n• Low gate input resistance;

ST

意法半导体