STB60N06-14

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.012Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTED CHARACTERIZATION ■THROUGH-HOLEI2PAK(TO-262)

STB60N06-14

Marking：D2PAK；Package：TO-263；N-Channel 60-V (D-S) MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET

60N06-14

iscN-ChannelMOSFETTransistor

P60N06-14

N-Channel60-V(D-S)MOSFET

STP60N06-14

IscN-ChannelMOSFETTransistor

STP60N06-14

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.012Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTEDCHARA