N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：516.34 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：516.34 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET

ST

意法半导体

N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：516.34 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：516.34 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体