N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.2 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD ■ THROUGH-HOLE I2PAK (T

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STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.81 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：202.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.1 Kbytes 页数：2 Pages

ISC

无锡固电