| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STB4NK60Z | N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to 文件：759 Kbytes 页数：16 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STB4NK60Z | N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：578.96 Kbytes 页数：20 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STB4NK60Z | N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：970.81 Kbytes 页数：28 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STB4NK60Z | N-Channel 650 V (D-S) MOSFET 文件：1.10288 Mbytes 页数：9 Pages | VBSEMI 微碧半导体 | VBSEMI | |
N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：578.96 Kbytes 页数：20 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：970.81 Kbytes 页数：28 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
丝印：B4NK60Z；Package：I2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure 文件：731.33 Kbytes 页数：32 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to 文件：759 Kbytes 页数：16 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser 文件：578.96 Kbytes 页数：20 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure 文件：731.33 Kbytes 页数：32 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
技术参数
- Package：
I2PAK
- Grade：
Industrial
- VDSS(V)：
600
- RDS(on)_max(@ VGS=10V)(Ω)：
2
- Drain Current (Dc)_max(A)：
4
- PTOT_max(W)：
70
- Qg_typ(nC)：
18.8
- Reverse Recovery Time_typ(ns)：
400
- Peak Reverse Current_nom(A)：
8.5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
18+ |
262 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
ST |
25+ |
N/A |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
ST |
25+ |
TO-263/D2-PAK |
32500 |
普通 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
23+ |
TO-263 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
ST |
23+ |
TO262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
2022+ |
D2PAK |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ST |
10+ |
TO262 |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
22+ |
D2PAKTO220MONOC |
21088 |
询价 |
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