N沟道800 V、0.23 Ohm典型值、16 A MDmesh K5功率MOSFET，D2PAK封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a D짼PAK package

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STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220FP package

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STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220 package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high e

文件：722.43 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体