首页 >STB200NF03MOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-channel30V-0.0032ohm-120A-D2PAK/I2PAK/TO-220STripFETTMIIIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel30V-0.0032ohm-120A-D2PAK/I2PAK/TO-220STripFETTMIIIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNEL30V-0.0032ohm-120AD짼PAK/I짼PAK/TO-220STripFET??IIPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel30V-0.0032ohm-120A-D2PAK/I2PAK/TO-220STripFETTMIIIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel30V-0.0032ohm-120A-D2PAK/I2PAK/TO-220STripFETTMIIIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL30V-0.0032ohm-120AD짼PAK/I짼PAK/TO-220STripFET??IIPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNEL30V-0.002ohm-120ATO-247ULTRALOWON-RESISTANCESTripFET??IIMOSFET DESCRIPTION ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisparticularlysuitableinOR-ingfunctioncircuitsandsynchronousrectification. ■TYPICALRDS(on)=0.002Ω ■100AV | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
